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6.774

Physics of Microfabrication: Front End Processing

Prof. Judy Hoyt, Prof. L. Rafael Reif | Fall 2004

Science & Math Physics Engineering Materials Science and Engineering Mechanical Engineering Condensed Matter Physics Electronic Materials Microtechnology

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CC BY-NC-SA 4.0

Course introduction

This course is offered to graduates and focuses on understanding the fundamental principles of the “front-end” processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

Course Information

Source	MIT 開放式課程
Department	Electrical Engineering and Computer Science
Language	English
Number of videos	21

Course videos (21)

3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.)

4. Wafer Cleaning and Gettering (cont.)

4. Wafer Cleaning and Gettering (cont.)

5. Wafer Cleaning and Gettering - Contamination Measurement Techniques

5. Wafer Cleaning and Gettering - Contamination Measurement Techniques

6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models

6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models

7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect

7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect

8. Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

8. Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic

9. Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects

9. Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects

10. Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion

10. Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion

11. Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques

12. Ion Implantation and Annealing - Analytic Models and Monte Carlo

12. Ion Implantation and Annealing - Analytic Models and Monte Carlo

13. Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED

13. Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED

14. Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction

14. Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction

15. Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail

15. Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail

16. The SUPREM IV Process Simulator

16. The SUPREM IV Process Simulator

17. Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth

17. Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth

18. Thin Film Deposition and Epitaxy - CVD Examples and PVD

18. Thin Film Deposition and Epitaxy - CVD Examples and PVD

19. Thin Film Deposition and Epitaxy - Modeling Topography of Deposition

19. Thin Film Deposition and Epitaxy - Modeling Topography of Deposition

20. Etching - Introduction

20. Etching - Introduction

21. Etching - Poly Gate Etching, Stringers, Modeling of Etching

21. Etching - Poly Gate Etching, Stringers, Modeling of Etching

22. Silicides, Device Contacts, Novel Gate Materials

22. Silicides, Device Contacts, Novel Gate Materials

23. Growth and Processing of Strained Si/SiGe and Stress Effects on Devices

23. Growth and Processing of Strained Si/SiGe and Stress Effects on Devices